H16200/H16201/H16204 Series Current Type (High Quantum Efficiency) PMTs

Product Parameters:

At 25°C

parameters			-40	-50	unit (of measure)
Input Voltage			+11.5 to +15.5		V
Maximum Input Voltage			18		V
Maximum input current *1			12		mA
Maximum output signal current			40		μA
Maximum control voltage *2			+0.9 (input impedance 30kΩ)		V
Recommended control voltage adjustment range *2			+0.5 to +0.8		V
effective area			Diameter 5		mm
Spectral sensitivity characteristics			300 to 740	380 to 900	nm
peak quantum efficiency wavelength			520	630	nm
[Cathode] Quantum efficiency	At peak quantum efficiency wavelengths	minimal	40	14	%
		typical value	45	19	%
	At 800 nanometers	minimal	--	11	%
		typical value	--	15	%
[Cathode] Radiation sensitivity	At peak quantum efficiency wavelengths	minimal	168	70	mA/W
		typical value	189	95	mA/W
	At 800 nanometers	minimal	--	71	mA/W
		typical value	--	97	mA/W
[Anode] Radiation sensitivity *2	At peak quantum efficiency wavelengths	minimal	1.0 × 105	4.2 × 104	A/W
		typical value	1.9 × 105	9.5 × 104	A/W
	At 800 nanometers	minimal	--	4.3 × 104	A/W
		typical value	--	9.7 × 104	A/W
[Anode]	Dark current *3 *4	typical value	3	4	nA
		maximum values	10	12	nA
	Dark current *4 *5 P-type	typical value	6000	7500	s-1
		maximum values	18000	22500
[Anode]	Gain rate *3	typical value	1.0 × 106		–
	Gain rate *3 P-type	typical value	1.0 × 106		–
Rise time *3		typical value	1		ns
Ripple noise (between peaks)*3*6		maximum values	0.6		mV
Establishment time *7		typical value	0.2		s
Operating ambient temperature *8			+5 to +35		°C
Storage temperature *8			-20 to +50		°C
weights			h16200:76/h16201:100/h16204:106		g

NOTE.

*1, Input voltage = +15 V, Control voltage = +0.8 V

*2, Input impedance = 30 kΩ

*3, Control voltage = +0.8 V

*4, After 30 min storage in darkness

*5, Plateau voltage = control voltage

*6, Load resistance = 1 MΩ, Load capacitance = 22 pF

*7, The time required for the output to reach a stable level following a change in the control voltage from +0.8 V to +0.5 V

*8, No condensation