The third generation of semiconductors is a wide-band semiconductor material based on silicon carbide SiC, gallium nitride GaN, with high breakdown electric field, high saturation electron velocity, high thermal conductivity, high electron density, high mobility, and can withstand high power.

Third-generation semiconductor materials have been recognized as the new driving force behind the development of today's electronics industry. Silicon carbide (SiC), a typical representative of third-generation semiconductors, for example, has a high critical magnetic field, high electron saturation velocity and very high thermal conductivity, making its devices suitable for high-frequency and high-temperature application scenarios, compared with silicon devices, silicon carbide devices can significantly reduce switching losses.

Therefore, silicon carbide can be used to manufacture high-voltage and high-power power electronic devices such as MOSFETs, IGBTs, SBDs, etc., which are used in industries such as smart grids and new energy vehicles. Compared with silicon components, gallium nitride is characterized by high critical magnetic field, high electron saturation velocity with very high electron mobility, which makes it an excellent choice for ultra-high frequency devices for applications in 5G communications, microwave radio frequency and other fields.

Third-generation semiconductor materials are resistant to high temperature, high power, high voltage, high frequency and high radiation characteristics, compared with the first generation of silicon-based semiconductors can reduce the energy loss of more than 50%, while making the equipment volume reduced by more than 75%. The third generation of semiconductors belongs to the concept of Moore's law, process and equipment requirements are relatively low, the difficulty lies in the preparation of third-generation semiconductor materials, while in the design of the advantages to be had.